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| DG2511/2512/2513 Vishay Siliconix Low-Voltage, Low rON, Single Analog Switch In miniQFN-6 Package DESCRIPTION The DG2511/DG2512/DG2513 are low on-resistance, single-pole/double-throw or single-pole/single-throw monolithic CMOS analog switch. It is designed for low voltage applications. The DG2511/DG2512/DG2513 are ideal for portable and battery powered equipment, requiring high performance and efficient use of board space. In additional to the low onresistance (1.3 at 2.7 V). The DG2511 is an SPDT and the DG2512/DG2513 are SPST. The switch conducts equally well in both directions when on, and blocks up to the power supply level when off. The DG2511/DG2512/DG2513 are built on Vishay Siliconix's low voltage JI5L process. An epitaxial layer prevents latchup. Break-before-make is guaranteed. The DG2511/DG2512/DG2513 represents a breakthrough in packaging development for analog switching products. The miniQFN-6 package (1.2 x 1.0 mm). As a committed partner to the community and the environment, Vishay Siliconix manufactures this product with the lead (Pb)-free device terminations. For analog switching products manufactured with NiPdAu device terminations, the lead (Pb)-free "-E4" suffix is being used as a designator. FEATURES * * * * * Low Voltage Operation (1.8 V to 5.5 V) Low On-Resistance - rON: 1.3 at 2.7 V Low Charge Injection Low Voltage Logic Compatible miniQFN-6 Package (1.2 x 1.0 mm) RoHS COMPLIANT BENEFITS * * * * * Reduced Power Consumption Simple Logic Interface High Accuracy Reduce Board Space Guaranteed 2 V Operation APPLICATIONS * * * * * * * Cellular Phones Communication Systems Portable Test Equipment Battery Operated Systems Sample and Hold Circuits ADC and DAC Applications Low Voltage Data Acquisition Systems FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG2511 miniQFN-6 DG2512 miniQFN-6 DG2513 miniQFN-6 NO 1 6 IN NC 1 6 IN NO 1 6 IN GND 2 5 V+ GND 2 5 V+ GND 2 5 V+ NC 3 4 COM NC 3 4 COM NO 3 4 COM Top View Top View Top View TRUTH TABLE Ax Pin 1 Device Marking: Ax for DG2511 Bx for DG2512 Cx for DG2513 x = Date/Lot Traceability Code Note: Pin 1 has long lead Logic 0 1 NC ON OFF NO OFF ON COMMERCIAL ORDERING INFORMATION Temp Range - 40 to 85 C Package miniQFN-6 Lead (Pb)-free with Tape and Reel Part Number DG2511DN-T1-E4 DG2512DN-T1-E4 DG2513DN-T1-E4 www.vishay.com 1 Document Number: 74454 S-70327-Rev. B, 26-Feb-07 DG2511/2512/2513 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Reference V+ to GND IN, COM, NC, NOa Continuous Current (NO, NC, COM pins) Peak Current (Pulsed at 1 ms, 10 % duty cycle) Storage Temperature Power Dissipation (Packages)b D Suffix miniQFN-6c Symbol Limit - 0.3 to + 6 - 0.3 to (V+ + 0.3 V) 150 300 - 65 to 150 160 Unit V mA C mW Notes: a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 2.0 mW/C above 70 C. SPECIFICATIONS (V+ = 3 V) Test Conditions Otherwise Unless Specified Parameter Analog Switch Analog Signal Ranged On-Resistance rON Match rON Flatness VNO, VNC, VCOM rON rON rON Flatness INO(off) INC(off) ICOM(off) Channel-On Leakage Currentf Digital Control Input High Voltage Input Low Voltage Input Capacitance Input Current Dynamic Characteristics Turn-On Time Turn-Off Time Break-Before-Make Time Charge Injectiond Off-Isolationd Crosstalkd NO, NC Off Capacitanced Channel-On Capacitanced Power Supply Power Supply Range Power Supply Current tON tOFF tBBM QINJ OIRR XTALK CNO(off) CNC(off) CON V+ I+ VIN = 0 or V+ CL = 1 nF, VGEN = 0 V, RGEN = 0 RL = 50 , CL = 5 pF, f = 1 MHz V+ = 2.7 V, VNO or VNC = 1.5 V, RL = 50 , CL = 35 pF Room Full Room Full Room Room Room Room Room Room 1.8 0.01 18 7 1 12 3 - 58 - 64 21 61 5.5 1.0 V A pC dB 43 49 32 34 ICOM(on) VINH VINL Cin IINL or IINH VIN = 0 or V+ V+ = 2.7 V, VCOM = 0.5 V/1.5 V INO, INC = 100 mA Full Room Full Room Room Room Full Room Full Room Full Full Full Full Full 1 4 1 -2 - 20 -2 - 20 -2 - 20 1.6 0.4 0 1.4 V+ 1.7 1.9 0.15 0.4 2 20 2 20 2 20 nA V Symbol V+ = 3 V, 10 %,VIN = 0.4 V or 2.0 Ve Tempa Minb Limits - 40 to 85 C Typc Maxb Unit 0.3 Switch Off Leakage Currentf V+ = 3.3 V, VNO, VNC= 1 V/3 V, VCOM = 3 V/1 V V+ = 3.3 V, VNO, VNC = VCOM = 1 V/3 V V pF A ns VIN = 0 or V+, f = 1 MHz pF www.vishay.com 2 Document Number: 74454 S-70327-Rev. B, 26-Feb-07 DG2511/2512/2513 Vishay Siliconix SPECIFICATIONS (V+ = 5.0 V) Test Conditions Otherwise Unless Specified Parameter Analog Switch Analog Signal Ranged On-Resistance rON Match rON Flatness VNO, VNC, VCOM rON rON rON Flatness INO(off) INC(off) ICOM(off) Channel-On Leakage Current Digital Control Input High Voltage Input Low Voltage Input Capacitance Input Current Dynamic Characteristics Turn-On Time Turn-Off Time Break-Before-Make Time Charge Injectiond Off-Isolationd Crosstalkd NO, NC Off Capacitanced Channel-On Capacitanced Power Supply Power Supply Range Power Supply Current tON tOFF tBBM QINJ OIRR XTALK CNO(off) CNC(off) CON V+ I+ CL = 1 nF, VGEN = 0 V, RGEN = 0 RL = 50 , CL = 5 pF, f = 1 MHz VNO or VNC = 2.5 V, RL = 50 , CL = 35 pF Room Full Room Full Room Room Room Room Room Room 1.8 0.01 11 6 1 5 14 - 58 - 64 19 61 5.5 1.0 V A pC dB 35 39 31 33 ICOM(on) VINH VINL Cin IINL or IINH VIN = 0 or V+ V+ = 4.5 V, VCOM = 0.5 V/2.5 V, INO, INC = 100 mA Full Room Full Room Room Room Full Room Full Room Full Full Full Full Full 1 4 1 -2 - 20 -2 - 20 -2 - 20 1.8 0.6 0 1 V+ 1.3 1.45 0.15 0.4 2 20 2 20 2 20 nA V Symbol V+ = 5.0 V, 10 %, VIN = 0.6 V or 1.8 Ve Tempa Minb Limits - 40 to 85 C Typc Maxb Unit 0.3 Switch Off Leakage Current V+ = 5.5 V, VNO, VNC= 1 V/4.5 V, VCOM = 4.5 V/1.0 V V+ = 5.5 V, VNO, VNC = VCOM = 1.0 V/4.5 V V pF A ns VIN = 0 or V+, f = 1 MHz pF VIN = 0 or V+ Notes: a. Room = 25 C, Full = as determined by the operating suffix. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. c. Typical values are for design aid only, not guaranteed nor subject to production testing. d. Guarantee by design, nor subjected to production test. e. VIN = input voltage to perform proper function. f. Guaranteed by 5 V leakage testing, not production tested. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 74454 S-70327-Rev. B, 26-Feb-07 www.vishay.com 3 DG2511/2512/2513 Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 C, unless otherwise noted 3.0 V+ = 1.8 V I+ - Supply Current (pA) V+ = 2.0 V 2.0 V+ = 2.7 V V+ = 3.0 V V+ = 4.5 V V+ = 3.6 V V+ = 5.0 V V+ = 5.5 V 10000 100000 V+ = 5.5 V VIN = 0 V 2.5 rON - On-Resistance () 1000 1.5 100 1.0 0.5 T = 25 C IS = 100 mA 0.0 0 1 2 3 4 5 VCOM - Analog Voltage (V) 10 1 - 60 - 40 - 20 0 20 40 60 80 100 Temperature (C) rON vs. VCOM and Supply Voltage 3.0 V+ = 3.0 V, IS = 100 mA + 85 C + 25 C - 40 C 10 mA 1 mA I+ - Supply Current (A) 100 A 10 A Supply Current vs. Temperature 2.5 rON - On-Resistance (W) 2.0 1.5 V+ = 5.5 V 1 A 100 nA 10 nA 1 nA 1.0 0.5 0.0 0 0.5 1 1.5 2 2.5 3 VCOM - Analog Voltage (V) 10 100 1K 10K 100K 1M 10M Input Switching Frequency (Hz) rON vs. Analog Voltage and Temperature 3.0 V+ = 5.0 V, IS = 100 mA + 85 C rON - On-Resistance (W) 2.0 - 40 C Leakage Current (pA) + 25 C 1000 10000 Supply Current vs. Input Switching Frequency 2.5 V+ = 5.5 V ICOM(off) 1.5 100 ICOM(on) INC/NO(on) 1.0 10 0.5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VCOM - Analog Voltage (V) 1 - 60 - 40 - 20 0 20 40 60 80 100 Temperature (C) rON vs. Analog Voltage and Temperature www.vishay.com 4 Leakage Current vs. Temperature Document Number: 74454 S-70327-Rev. B, 26-Feb-07 DG2511/2512/2513 Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 C, unless otherwise noted 500 400 VT - Switching Threshold (V) 300 Leakage Current (pA) 200 100 0 - 100 - 200 - 300 - 400 - 500 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VCOM - Analog Voltage (V) 0.0 1 2 3 4 5 6 I COM(on) I NO(off) /I NC(off) V+ = 5.5 V 1.5 2.0 ICOM(off) 1.0 0.5 V+ - Supply Voltage (V) Leakage vs. Analog Voltage 25 20 10 tON, tOFF, - Switchint Time (ns) 20 tON V+ = 2.7 V Q - Charge Injection (pC) 0 - 10 Switching Threshold vs. Supply Voltage V+ = 2.0 V V+ = 3.0 V 15 tON V+ = 4.5 V V+ = 5.0 V - 20 - 30 - 40 - 50 - 60 0.0 10 tOFF V+ = 2.7 V 5 tOFF V+ = 4.5 V 0 - 60 - 40 - 20 0 20 40 60 80 100 Temperature (C) 1.0 2.0 3.0 4.0 5.0 VNO/NC - Analog Voltage (V) Switching Time vs. Temperature and Supply Voltage 10 LOSS 0 - 10 LOSS, OIRR, XTLAK (dB) - 20 - 30 - 40 - 50 - 60 - 70 - 80 100 K X TALK V+ = 3.0 V RL = 50 1M 10 M Frequency (Hz) 100 M 1G OIRR Charge Injection vs. Analog Voltage Insertion Loss, Off-Isolation, Crosstalk vs. Frequency Document Number: 74454 S-70327-Rev. B, 26-Feb-07 www.vishay.com 5 DG2511/2512/2513 Vishay Siliconix TEST CIRCUITS V+ Logic Input V+ Switch Input NO or NC IN Logic Input GND 0V CL (includes fixture and stray capacitance) VOUT = VCOM RL R L + R ON Logic "1" = Switch On Logic input waveforms inverted for switches that have the opposite logic sense. RL 50 CL 35 pF COM Switch Output VOUT 0.9 x V OUT Switch Output 0V tON tOFF 0V +3V 50 % tr < 5 ns tf < 5 ns Figure 1. Switching Time V+ Logic Input COM VO RL 50 CL 35 pF 3V 0V tr < 5 ns tf < 5 ns V+ VNO VNC NO NC IN GND VNC = V NO VO Switch Output 0V 90 % tD tD CL (includes fixture and stray capacitance) Figure 2. Break-Before-Make Interval V+ Rgen + Vgen 3V V+ COM IN GND NC or NO VOUT IN CL On VOUT VOUT Off Q = VOUT x CL On IN depends on switch configuration: input polarity determined by sense of switch. Figure 3. Charge Injection www.vishay.com 6 Document Number: 74454 S-70327-Rev. B, 26-Feb-07 DG2511/2512/2513 Vishay Siliconix TEST CIRCUITS V+ 10 nF V+ COM IN COM NC or NO VNC/ NO RL Off Isolation = 20 log GND VCOM 0 V, 2.4 V Analyzer Figure 4. Off-Isolation V+ 10 nF V+ COM Meter IN 0 V, 2.4 V NC or NO GND f = 1 MHz Impedance Analyzer Figure 5. Channel Off/On Capacitance Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74454. Document Number: 74454 S-70327-Rev. B, 26-Feb-07 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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